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Details
Crack-free yttria stabilized zirconia thin films by aerosol assisted chemical vapor deposition: Influence of water and carrier gas
| Author | Schlupp, M. V. F.; Binder, S.; Martynczuk, J.; Prestat, M.; Gauckler, L. J. | |
| Year | 2012 | |
| Type | Journal Article | |
| Journal | Thin Solid Films | |
| Volume | 522 | |
| Pages | 58-65 | |
| Date | Nov | |
| ISSN | 0040-6090 | |
| Accession Numer | WOS:000310782000015 | |
| Abstract | Yttria stabilized zirconia thin films are deposited on silicon single crystal substrates by aerosol assisted chemical vapor deposition from precursor solutions of zirconium and yttrium 2,4-pentanedionate in ethanol. Continuous films are obtained using pure oxygen, pure nitrogen, or mixtures of both as carrier gas. In the simultaneous presence of water and oxygen, crack formation is observed for films deposited at intermediate substrate temperatures (450 degrees C), while those deposited at low (300 degrees C) and high (600 degrees C) temperatures remain crack-free. Crack-free films can be deposited at 450 degrees C in a water-free setting, or in the presence of water using pure nitrogen as carrier gas. The addition of water to the precursor solutions also significantly reduces film growth rates. (C) 2012 Elsevier B. V. All rights reserved. | |
| Notes | Schlupp, M. V. F. Binder, S. Martynczuk, J. Prestat, M. Gauckler, L. J. EMRS Symposium Q on Engineering of Wide Bandgap Semiconductor Materials for Energy Saving Jun, 2011 Nice, FRANCE European Mat Res Soc (EMRS) |
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| URL |
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| Link to PDF | ||
| Record Number | 21 | |
| Group | nonmet |
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