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Processing and properties of Bi-2212 thick films

Author   Heeb, B.; Buhl, D.; Lang, Th.; Gauckler, L.J.
Year of Conference   1993
Type   Conference Proceedings
Conference Name   Proceedings of the Symposium on Processing of Long Lengths of Superconductors
Conference Location   Pittsburgh, USA
Publisher   Minerals, Metals & Materials Soc (TMS)
Pages   213-219
Custom 1   CP
Custom 2   SUPRA
Abstract   Bi-2212 thick films were produced by tape casting and partial melting on Ag- substrates. Highly aligned microstructures throughout the oxide thickness of 20 [micro;]m were achieved. A reducing heat treatment optimizing the oxygen stoichiometry of the Bi-2212 phase led to a Tc of 90 K and to a jc of 1.75.104 A/cm2 at 77 K/0 T using the 1 [mu]V/cm criterion. The current-voltage characteristic of the thick films follows the power law E varies directly as j[alpha] at 77 K in zero field. The exponent [alpha] = 5 for the films is considerably smaller than those found for melt processed bulk material. [Author abstract; 10 Refs; In English]
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Record Number   108
Group   nonmet

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