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Details
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Processing and properties of Bi-2212 thick films
Author |
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Heeb, B.; Buhl, D.; Lang, Th.; Gauckler, L.J. |
Year of Conference |
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1993 |
Type
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Conference Proceedings |
Conference Name |
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Proceedings of the Symposium on Processing of Long Lengths of Superconductors |
Conference Location |
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Pittsburgh, USA |
Publisher |
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Minerals, Metals & Materials Soc (TMS) |
Pages |
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213-219 |
Custom 1 |
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CP |
Custom 2 |
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SUPRA |
Abstract |
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Bi-2212 thick films were produced by tape casting and partial melting on Ag- substrates. Highly aligned microstructures throughout the oxide thickness of 20 [micro;]m were achieved. A reducing heat treatment optimizing the oxygen stoichiometry of the Bi-2212 phase led to a Tc of 90 K and to a jc of 1.75.104 A/cm2 at 77 K/0 T using the 1 [mu]V/cm criterion. The current-voltage characteristic of the thick films follows the power law E varies directly as j[alpha] at 77 K in zero field. The exponent [alpha] = 5 for the films is considerably smaller than those found for melt processed bulk material. [Author abstract; 10 Refs; In English] |
URL |
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Record Number |
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108 |
Group
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nonmet |
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