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Impact of substrate material and annealing conditions on the microstructure and chemistry of yttria-stabilized-zirconia thin films
| Author | Scherrer, Barbara; Rossi, Antonella; Martynczuk, Julia; Rossell, Marta D.; Bieberle-Hütter, Anja; Rupp, Jennifer L. M.; Erni, Rolf; Gauckler, Ludwig J. | |
| Year | 2011 | |
| Type | Journal Article | |
| Journal | Journal of Power Sources | |
| Volume | 196 | |
| Issue | 18 | |
| Pages | 7372-7382 | |
| ISSN | 0378-7753 | |
| Keywords | Micro-solid oxide fuel cell; MEMS; Silicon diffusion; Yttria-stabilized-zirconia; Thin film; Spray pyrolysis | |
| Abstract | Si-diffusion from Si-based substrates into yttria-stabilized-zirconia (YSZ) thin films and its impact on their microstructure and chemistry is investigated. YSZ thin films used in electrochemical applications based on micro-electrochemical systems (MEMS) are deposited via spray pyrolysis onto silicon-based and silicon-free substrates, i.e. SixNy-coated Si wafer, SiO2 single crystals and Al2O3, sapphire. The samples are annealed at 600 °C and 1000 °C for 20 h in air. Transmission electron microscopy (TEM) showed that the SixNy-coated Si wafer is oxidized to SiOz at the interface to the YSZ thin film at temperatures as low as 600 °C. On all YSZ thin films, silica is detected by X-ray photoelectron spectroscopy (XPS). A particular large Si concentration of up to 11 at% is detected at the surface of the YSZ thin films when deposited on silicon-based substrates after annealing at 1000 °C. Their grain boundary mobility is reduced 2.5 times due to the incorporation of SiO2. YSZ films on Si-based substrates annealed at 600 °C show a grain size gradient from the interface to the surface of 3 nm to 10 nm. For these films, the silicon content is about 1.5 at% at the thin film's surface. | |
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| Record Number | 767 | |
| Group | nonmet |
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